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15GN01M

更新时间:2024-04-25 20:52:13

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15GN01M的中文资料和PDF资料下载 图文及资料仅供参考，以实际PDF为准

大小：28.88KB
厂家：SANYO[Sanyo Semicon Device]
描述：15GN01M No.7540-1/4 Features ? Small ON-resistance [Ron=2Ω (I B =3mA)]. ? Small output capacitance [Cob=1.1pF (V CB =10V)]. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 15 V Collector-to-Emitter Voltage V CEO 8V Emitter-to-Base Voltage V EBO 3V Collector Current I C 50 mA Collector Dissipation P C Mounted on a ceramic board(250mm 2 5 0.8mm) 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO V CB =10V, I E =0 0.5 μA Emitter Cutoff Current I EBO V EB =2V, I C =0 0.5 μA DC Current Gain h FE V CE =5V, I C =10mA 200 400 Gain-Bandwidth Product f T V CE =5V, I C =10mA 1.0 1.5 GHz Output Capacitance Cob V CB =10V, f=1MHz 1.1 1.5 pF Collector-to-Emitter Saturation Voltage V CE (sat) I C =20mA, I B =2mA 0.06 0.12 V Output ON resistance Ron I B =3mA, f=10kHz 2.0 Ω Markin

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