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2MBI75S-120 Datasheet

  • 2MBI75S-120

  • IGBT Module

  • 299.96KB

  • FUJI

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2MBI 75S-120
IGBT MODULE ( S-Series )
I
Features
鈥?/div>
NPT-Technology
鈥?/div>
Square SC SOA at 10 x I
C
鈥?/div>
High Short Circuit Withstand-Capability
鈥?/div>
Small Temperature Dependence of the Turn-Off
Switching Loss
鈥?/div>
Low Losses And Soft Switching
2-Pack IGBT
1200V
2x75A
I
Outline Drawing
I
Applications
鈥?/div>
High Power Switching
鈥?/div>
A.C. Motor Controls
鈥?/div>
D.C. Motor Controls
鈥?/div>
Uninterruptible Power Supply
I
Maximum Ratings and Characteristics
鈥?/div>
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Continuous
Collector
1ms
Current
Continuous
1ms
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
A.C. 1min.
*
1
Screw Torque
( T
c
=25掳C
)
Symbols
V
CES
V
GES
I
C
25掳C / 80掳C
I
C PULSE
25掳C / 80掳C
-I
C
-I
C PULSE
P
C
T
j
T
stg
V
is
Mounting *
Terminals *
2
( at T
j
=25掳C )
Symbols
2
I
Equivalent Circuit
Units
V
Ratings
1200
卤
20
100 / 75
200 / 150
75
150
600
+150
-40
鈭?/div>
+125
2500
3.5
3.5
A
W
掳C
V
Nm
Note:
1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value; 2.5
鈭?/div>
3.5 Nm (M5)
鈥?/div>
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r,x
t
r,i
t
OFF
t
f
V
F
t
rr
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=卤 20V
V
GE
=20V I
C
=75mA
T
j
= 25掳C
V
GE
=15V I
C
=75A
T
j
=125掳C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
= 600V
I
C
= 75A
V
GE
=
卤15V
R
G
= 16鈩?/div>
Inductive Load
I
F
=75A; V
GE
=0V
I
F
=75A
T
j
= 25掳C
T
j
=125掳C
Min.
Typ.
5.5
7.2
2.3
2.8
9鈥?00
1鈥?75
1鈥?50
0.35
0.25
0.10
0.45
0.08
2.3
2.0
Max.
1.0
200
8.5
2.6
Units
mA
nA
V
pF
1.2
0.6
1.0
0.3
3.0
350
碌s
V
ns
鈥?/div>
Thermal Characteristics
Items
Thermal Resistance
Symbols
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
R
th(j-c)
R
th(j-c)
R
th(c-f)
Max.
0.21
0.47
Units
掳C/W
0.05

2MBI75S-120 产品属性

  • ?频道

  • 100A

  • 2.6V

  • 600W

  • 1.2kV

  • Module

  • 7

  • 600ns

  • 300ns

  • 600W

  • 600W

  • 92mm

  • 34mm

  • 30mm

  • M232

  • 2

  • 600W

  • 100A

  • 双

  • 25°C

  • 25°C

  • 1.2kV

  • 75A

  • 200A

  • 150°C

  • 螺丝

  • 0.18kg

  • 2.5kV

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