SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N2904E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
FEATURES
: I
CEX
=50nA(Max.), I
BL
=50nA(Max.)
@V
CE
=30V, V
EB
=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @I
C
=50mA, I
B
=5mA.
: C
ob
=4pF(Max.) @V
CB
=5V.
1. Q
1
2. Q
1
3. Q
2
4. Q
2
5. Q
2
6. Q
1
H
A1
Low Leakage Current
A
C
1
6
C
2
5
3
4
P
P
DIM
A
A1
B
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_ 0.05
1.6 +
_
1.2 + 0.05
0.50
_
0.2 + 0.05
_
0.5 + 0.05
_
0.12 + 0.05
5
Low Collector Output Capacitance
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
RATING
60
40
6
200
50
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
EMITTER
BASE
BASE
COLLECTOR
EMITTER
COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
J
D
Q2
1
2
3
Marking
Type Name
ZC
2002. 9. 17
Revision No : 0
1/4
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