4.0鈩?/div>
I
D(ON)
(min)
1.5A
1.5A
Order Number / Package
TO-39
2N6660
2N6661
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex鈥檚 well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex鈥檚 vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
s
Free from secondary breakdown
s
Low power drive requirement
s
Ease of paralleling
s
Low C
ISS
and fast switching speeds
s
Excellent thermal stability
s
Integral Source-Drain diode
s
High input impedance and high gain
s
Complementary N- and P-channel devices
Package Options
Applications
s
Motor controls
s
Converters
s
Amplifiers
s
Switches
s
Power supply circuits
s
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
DGS
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
BV
DGS
卤
20V
-55掳C to +150掳C
300掳C
TO-39
Case: DRAIN
Note: See Package Outline section for dimensions.
7-3
1
2
3
4
5
