鈻?/div>
Electrical Characteristics
T
a
=
25掳C
卤
3掳C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Resistor
between B and E)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CER
V
CEO
V
EBO
I
CEO
h
FE
V
CE(sat)
f
T1
f
T2
C
ob
Conditions
I
C
=
100
碌A,
I
E
=
0
I
C
=
500
碌A,
R
BE
=
470
鈩?/div>
I
C
=
1 mA, I
B
=
0
I
E
=
100
碌A,
I
C
=
0
V
CE
=
35 V, I
B
=
0
V
CE
=
5 V, I
C
=
100 mA
I
C
=
150 mA, I
B
=
15 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
= 鈭?10
mA, f
=
200 MHz
V
CB
=
30 V, I
E
=
0, f
=
1 MHz
300
350
3
pF
20
0.5
Min
110
100
50
3.5
10
Typ
Max
Unit
V
V
V
V
碌A
铮?/div>
V
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(3.2)
Publication date: February 2003
SJC00133BED
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