2SC3604 Datasheet

  • 2SC3604

  • 94.47KB

  • 8页

  • NEC

扫码查看芯片数据手册

上传产品规格书

PDF预览

DATA SHEET
SILICON TRANSISTOR
2SC3604
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3604 is an NPN epitaxial transistor designed for low-
noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3.8 MIN.
FEATURES
鈥?/div>
Low noise
: NF = 1.6 dB TYP. @ f = 2.0 GHz
鈥?/div>
High power gain : G
A
= 12 dB TYP. @ f = 2.0 GHz
C
3.8 MIN.
3.8 MIN.
B
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T (T
C
= 25
掳C)
T
j
T
stg
RATING
20
10
1.5
65
580
200
-65 to +150
UNIT
V
V
V
mA
mW
掳C
掳C
E
PIN CONNECTIONS
E: Emitter
C: Collector
0.5
0.05
B: Base
2.55
0.2
2.1
1.8 MAX.
0.55
3.8 MIN.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
45
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Insertion Gain
Maximum Available Gain
Power Gain
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
NF
Note
|S
21e
|
2
MAG
G
A
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 8 V, I
C
= 20 mA Pulse
V
CE
= 8 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 8 V, I
C
= 7 mA, f = 2.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 8 V, I
C
= 7 mA, f = 2.0 GHz
9.0
50
100
8
0.2
1.6
11
13
12
0.7
2.3
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
dB
dB
UNIT
0.1
+0.06
-0.03
0.5
0.05
A
A
Document No. P11675EJ2V0DS00 (2nd edition)
Date Published August 1996 P
Printed in Japan
1996

2SC3604 PDF文件相关型号

2SC3604

2SC3604相关型号PDF文件下载

  • 型号
    版本
    描述
    厂商
    下载
  • 英文版
    TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 30MA I(C) | TO-18
    ETC
  • 英文版
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-98VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-98VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | TO-92
    ETC
  • 英文版
    泰丰
  • 英文版
    LICON NPN EPITAXIAL PLANAR TRANSISTOR
    ETC
  • 英文版
    LICON NPN EPITAXIAL PLANAR TRANSISTOR
    ETC [ETC]
  • 英文版
    NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APP...
    TOSHIBA
  • 英文版
    NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APP...
    TOSHIBA [Toshib...
  • 英文版
    2SC388
    ETC
  • 英文版
    NPN Epitaxial Planar Silicon Transistor
    Sanyo
  • 英文版
    NPN EPITAXIAL PLANAR TYPE
    Mitsubishi
  • 英文版
    TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 3A I(C)...
    ETC
  • 英文版
    TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
    TOSHIBA
  • 英文版
    TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
    TOSHIBA [T...
  • 英文版
    SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
    ETC
  • 英文版
    SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
    ETC [ETC]
  • 英文版
    Silicon NPN Epitaxial
    KEXIN [Gua...

扫码下载APP,
一键连接广大的电子世界。

在线人工客服

买家服务:
卖家服务:

0571-85317607

客服在线时间周一至周五
9:00-17:30

关注官方微信号,
第一时间获取资讯。

建议反馈

联系人:

联系方式:

按住滑块,拖拽到最右边
>>
感谢您向阿库提出的宝贵意见,您的参与是维库提升服务的动力!意见一经采纳,将有感恩红包奉上哦!