: NF = 1.6 dB TYP. @ f = 2.0 GHz
鈥?/div>
High power gain : G
A
= 12 dB TYP. @ f = 2.0 GHz
C
3.8 MIN.
3.8 MIN.
B
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T (T
C
= 25
掳C)
T
j
T
stg
RATING
20
10
1.5
65
580
200
-65 to +150
UNIT
V
V
V
mA
mW
掳C
掳C
E
PIN CONNECTIONS
E: Emitter
C: Collector
0.5
卤
0.05
B: Base
2.55
卤
0.2
蠁
2.1
1.8 MAX.
0.55
3.8 MIN.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
掳
C)
45
掳
ELECTRICAL CHARACTERISTICS (T
A
= 25
掳
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Insertion Gain
Maximum Available Gain
Power Gain
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
NF
Note
|S
21e
|
2
MAG
G
A
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 8 V, I
C
= 20 mA Pulse
V
CE
= 8 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 8 V, I
C
= 7 mA, f = 2.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 8 V, I
C
= 7 mA, f = 2.0 GHz
9.0
50
100
8
0.2
1.6
11
13
12
0.7
2.3
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
dB
dB
UNIT
0.1
+0.06
-0.03
0.5
卤
0.05
碌
A
碌
A
Document No. P11675EJ2V0DS00 (2nd edition)
Date Published August 1996 P
Printed in Japan
漏
1996