2SC4553 Datasheet

  • 2SC4553

  • NEC [NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCH...

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  • NEC

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4553
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4553 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
low power dissipation. In addition, a high h
FE
enables alleviation of
the driver load.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?High h
FE
and low V
CE(sat)
:
h
FE
鈮?/div>
800 (V
CE
= 2 V, I
C
= 3 A)
V
CE(sat)
鈮?/div>
0.12 V (I
C
= 3 A, I
B
= 0.03 A)
鈥?On-chip C to E damper diode
鈥?Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25掳C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25掳C)
P
T
(Ta = 25掳C)
T
j
T
stg
Ratings
100
100
7.0
卤7.5
卤10
2.0
30
2.0
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
掳C
掳C
(OHFWURGH &RQQHFWLRQ
 %DVH
 &ROOHFWRU
 (PLWWHU
(48,9$/(17 &,5&8,7
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15599EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998

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