2SC4673 Datasheet

  • 2SC4673

  • NPN Epitaxial Planar Silicon Transistor

  • 123.81KB

  • Sanyo

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Ordering number : EN3927
NPN Epitaxial Planar Silicon Transistor
2SC4673
UHF Low-Noise Amp, Wide-Band Amp
Applications
Features
鈥?Low noise figure : NF=1.5dB typ (f=0.9GHz).
鈥?High power gain :
铮碨2le铮?/div>
=8.0dB typ (f=0.9GHz).
鈥?High cutoff frequency : fT=4.5GHz typ.
2
Package Dimensions
unit: mm
2038-PCP
[2SC4673]
Specifications
Absolute Maximum Ratings
at Ta=25掳C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Conditions
Ratings
20
12
3
100
30
400
800
150
鈥?5 to +150
E : Emitter
C : Collector
B : Base
SANYO : PCP
Mounted on ceramic board
(250mm
2
脳0.8mm)
Junction Temperature
Storage Temperature
Tj
Tstg
Unit
V
V
V
mA
mA
mW
mW
掳C
掳C
Electrical Characteristics
at Ta=25掳C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
铮碨2le铮?/div>
2
NF
Conditions
VCB=12V, IE=0
VEB=2V, IC=0
VCE=10V, IC=20mA
VCE=10V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=10V, IC=20mA, f=0.9GHz
VCE=10V, IC=5mA, f=0.9GHz
Ratings
min
typ
max
1.0
10
200*
Unit
碌A
碌A
GHz
pF
pF
dB
dB
40*
4.5
1.1
0.75
8.0
1.5
3.0
* : The 2SC4673 is classified by 20mA hFE as follows :
40
C
80
60
D
120
100
E
200
Making : CD
hFE rank : C, D, E
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) 8-6790 No.3927-1/4

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