DATA SHEET
SILICON TRANSISTOR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
FEATURES
鈥?Low Noise, High Gain
鈥?Low Voltage Operation
鈥?Low Feedback Capacitance
C
re
= 0.20 pF TYP.
0.4
+0.1
鈥?.05
0.4
+0.1
鈥?.05
3
4
5藲
2.8
+0.2
鈥?.3
1.5
+0.2
鈥?.1
PACKAGE DIMENSIONS
in millimeters
ORDERING INFORMATION
PART
NUMBER
2SC4956-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation
side of the tape.
1
0.6
+0.1
鈥?.05
5藲
1.1
+0.2
鈥?.1
2SC4956-T2
3 Kpcs/Reel.
5藲
0 to 0.1
5藲
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)
PIN CONNECTIONS
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
9
6
2
10
60
150
鈥?5 to +150
V
V
V
mA
mW
藲C
藲C
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
The information in this document is subject to change without notice.
Caution;
Electrostatic Sensitive Device.
Document No. P10378EJ2V0DS00 (2nd edition)
(Previous No. TD-2407)
Date Published July 1995 P
Printed in Japan
漏
0.16
+0.1
鈥?.06
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perfora-
tion side of the tape.
0.8
0.4
+0.1
鈥?.05
(1.9)
QUANTITY
PACKING STYLE
2.9 卤0.2
(1.8)
0.85 0.95
2
1993
1
2
3
4
5
6
