Transistor
2SC5363(Tentative)
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
Unit: mm
1.6卤0.15
s
Features
q
q
q
0.4
0.8卤0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
High transition frequency f
T
.
Small collector output capacitance C
ob
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6卤0.1
1.0卤0.1
0.5
1
0.5
3
2
0.45卤0.1 0.3
0.75卤0.15
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
9
6
2
30
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
3Y
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Foward transfer gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
C
ob
f
T
| S
21e
NF
|
2
Conditions
V
CB
= 5V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 3V, I
C
= 10mA
V
CB
= 3V, I
E
= 0, f = 1MHz
V
CE
= 3V, I
C
= 10mA, f = 1.5GHz
V
CE
= 0.3V, I
C
= 1mA, f = 0.9GHz
V
CE
= 0.3V, I
C
= 1mA, f = 0.9GHz
40
100
0.4
10
6.5
1.7
min
typ
max
1
1
200
0.7
pF
GHz
dB
dB
Unit
碌A
碌A
0 to 0.1
0.2卤0.1
+0.1
1
1
2
