鈥?/div>
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
0.4
0.5
0.6
0.4
1.8
15.0
3.0
0.4
1 2
1.3
3
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
0.7
3.0
3.8nom
Specifications
Absolute Maximum Ratings
at Ta=25掳C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
15
10
7
5
9
1
0.55
150
--55 to +150
Unit
V
V
V
A
A
A
W
掳C
掳C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62502 TS IM TA-3603 / 21000 TS (KOTO) TA-2526 No.6403-1/4
0.7
1
2
3
4
