2SC5765
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5765
MEDIUM POWER AMPLIFIER APPLICATIONS
STOROBO FLASH APPLICATIONS
Unit: mm
路
Low Saturation Voltage: V
CE (sat) (1)
= 0.27 V (max.)
(I
C
= 3 A/I
B
= 60 mA)
Maximum Ratings
(Ta
=
25掳C)
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulsed
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
(Note1)
T
j
T
stg
Rating
15
10
7
5
9
550
150
-55
to 150
Unit
V
V
V
A
mW
掳C
掳C
JEDEC
JEITA
TOSHIBA
Weight:
0.13 g
鈥?/div>
鈥?/div>
2-4E1A
Note 1: When a device is mounted on a glass epoxy board
(35 mm
麓
30 mm
麓
1mm)
Electrical Characteristics
(Ta
=
25掳C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-Emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR)CEO
Test Condition
V
CB
=
15 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
1 mA, I
B
=
0
Min.
戮
戮
10
450
320
170
戮
戮
Typ.
戮
戮
戮
戮
戮
戮
戮
25
Max.
0.1
0.1
戮
700
戮
戮
0.27
戮
V
pF
Unit
mA
mA
V
h
FE(1)
(Note2) V
CE
=
1.5 V, I
C
=
0.5 A
DC current gain
h
FE(2)
(Note2) V
CE
=
1.5 V, I
C
=
2 A
h
FE(3)
(Note2) V
CE
=
1.5 V, I
C
=
5 A
Collector-Emitter saturation voltage
Collector-Output Capacitance
V
CE (sat)
(Note2)
C
ob
I
C
=
3 A, I
B
=
60 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Note 2: Pulse test
1
2002-01-16
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