2SC5866
Transistor
Medium power transistor (60V, 2A)
2SC5866
!
Features
1) High speed switching. (Tf : Typ. : 35ns at I
C
= 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at I
C
= 1.0m, I
B
= 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2094
!
External dimensions
(Units : mm)
TSMT3
0.95 0.95
(1)
2.8
1.6
1.9
0.4
(3)
(2)
2.9
1.0MAX
0.85
0.16
0.1
(1)Base
(2)Emitter
(3)Collector
0.3
0.6
Each lead has same dimensions
Abbreviated symbol : VL
!Applications
Low frequency amplifier
High speed switching
!
Structure
NPN Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SC5866
Taping
TL
3000
!
Absolute maximum ratings
(Ta=25掳C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
鈭?/div>
1 Pw=10ms
鈭?/div>
2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
60
60
6
2
4
500
150
鈭?5~+150
Unit
V
V
V
A
A
mW
掳C
掳C
1
2
3
