2SC5876
Transistor
Medium power transistor (60V, 0.5A)
2SC5876
!
Features
1) High speed switching. (Tf : Typ. : 80ns at I
C
= 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at I
C
= 100mA, I
B
= 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2088
!
External dimensions
(Units : mm)
(1)
(3)
(2)
0.3
1.25
2.1
0.2
0.15
(1)Emitter
(2)Base
(3)Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : VS
!Applications
Small signal low frequency amplifier
High speed switching
!
Structure
NPN Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SC5876
Taping
T106
3000
!
Absolute maximum ratings
(Ta=25掳C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
鈭?/div>
1 Pw=10ms
鈭?/div>
2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
60
60
6
0.5
1.0
200
150
鈭?5~+150
Unit
V
V
V
A
A
mW
掳C
掳C
鈭?/div>
1
鈭?/div>
2
0.7
0.9
1.3
2.0
UMT3
0.65 0.65
1/3
1
2
3
4
