鈥?/div>
Built-in dumper diode
蠁
3.2
卤0.1
13.7
+0.5
-0.2
2.0
卤0.2
Solder Dip
I
Absolute Maximum Ratings
T
C
=
25掳C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
*
Collector power dissipation
T
a
=
25掳C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CES
V
EBO
I
B
I
C
I
CP
P
C
Rating
1 500
1 500
5
3
6
9
30
2
150
鈭?5
to
+150
掳C
掳C
Unit
V
V
V
A
A
A
W
0.76
卤0.06
1.45
卤0.15
1.2
卤0.15
4.1
卤0.2
1.25
卤0.1
2.6
卤0.1
0.75
卤0.1
2.54
卤0.2
5.08
卤0.4
0.7
卤0.1
7掳 1
2
3
1: Base
2: Collector
3: Emitter
TO-220H Package
Marking Symbol: C5885
Internal Connection
C
B
E
Note) *: Non-repetitive peak collector current
I
Electrical Characteristics
T
C
=
25掳C
卤
3掳C
Parameter
Emitter-base voltage (Collector open)
Forward voltage
Collector-base cutoff current (Emitter open)
Symbol
V
EBO
V
F
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
I
F
=
3 A
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 500 V, I
E
=
0
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
V
CE
=
5 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.75 A
I
C
=
3 A, I
B
=
0.75 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
3 A, Resistance loaded
I
B1
=
0.75 A, I
B2
= 鈭?.5
A
3
5.0
0.5
5
Conditions
I
E
=
500 mA, I
C
=
0
Min
5
鈭?
50
1
10
2.5
1.5
Typ
Max
Unit
V
V
碌A
mA
铮?/div>
V
V
MHz
碌s
碌s
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00312AED
1
1
2
3
