飩?/div>
Electrical Characteristics
T
a
=
25掳C卤3掳C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A,
I
E
=
0
I
C
=
1
mA, I
B
=
0
I
E
=
10
碌A,
I
C
=
0
V
CB
=
10
V, I
E
=
0
V
CE
=
2
V, I
C
=
10
mA
I
C
=
200
mA, I
B
=
10
mA
V
CB
=
2
V, I
E
= 鈥?0 mA, f =
200
MHz
V
CB
=
10
V, f =
1
MHz
200
4.5
270
Min
15
12
5
0.1
680
250
Typ
Max
Unit
V
V
V
碌A
铮?/div>
mV
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
0.15 max.
Publication date : December
2004
SJC00324AED
1
1
2
3
