2SD2153 Datasheet

  • 2SD2153

  • High gain amplifier transistor (25V, 2A)

  • 67.21KB

  • 3页

  • ROHM

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2SD2153
Transistors
High gain amplifier transistor (25V, 2A)
2SD2153
!
Features
1) Low saturation voltage,
typically V
CE(sat)
= 0.12V at I
C
= I
B
= 1A / 20mA
2) Excellent DC current gain characteristics.
!
External dimensions
(Units : mm)
4.0
1.0
2.5
0.5
1.5
0.4
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
ROHM : MPT3
EIAJ : SC-62
!
Absolute maximum ratings
(Ta=25掳C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
鈭?/div>
Single pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
25
6
2
3
0.5
150
鈭?5 鈭?+150
Unit
V
V
V
A(DC)
A(Pulse)
鈭?/div>
W
掳C
掳C
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
鈭?/div>
Denotes h
FE
2SD2153
MPT3
UVW
DN
鈭?/div>
T100
1000
!
Electrical characteristics
(Ta=25掳C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
鈭?/div>
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
25
6
鈭?/div>
鈭?/div>
鈭?/div>
560
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
0.12
鈭?/div>
110
22
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
0.5
2700
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A
碌A
V
鈭?/div>
MHz
pF
I
C
=
50碌A
I
C
=
1mA
I
E
=
50碌A
V
CB
=
20V
V
EB
=
5V
I
C
/I
B
=
1A/20mA
Conditions
0.4
鈭?/div>
V
CE
/I
C
=
6V/0.5A
V
CE
=
10V , I
E
= 鈭?0mA
, f= 100MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
1.5

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