DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2090
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2090 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 2.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
2.1 卤0.1
1.25 卤0.1
2.0 卤0.2
0.3
+0.1
鈥?
0.65 0.65
G
FEATURES
鈥?Gate can be driven by 2.5 V
鈥?Because of its high input impedance, there鈥檚 no need to
consider drive current
0.3
Marking
0.9 卤0.1
Marking: G22
EQUIVALENT CURCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
0 to 0.1
PIN
CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50 %
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
50
卤7.0
卤100
卤200
150
150
鈥?5 to +150
UNIT
V
V
mA
mA
mW
藲C
藲C
Document No. D11228EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
0.15
鈥?.05
+0.1
0.3
鈥?.05
+0.1
S
D
漏
1996
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