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2SK2410 Datasheet

  • 2SK2410

  • MOS Field Effect Transistor

  • 108.63KB

  • NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2410
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2410 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 卤0.3
4.5 卤0.2
3.2 卤0.2
2.7 卤0.2
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)1
= 40 m鈩?MAX. (@ V
GS
= 10 V, I
D
= 15 A)
15.0 卤0.3
3 卤0.1
4 卤0.2
12.0 卤0.2
13.5
MIN.
R
DS(on)2
= 60 m鈩?MAX. (@ V
GS
= 4 V, I
D
= 15 A)
鈥?/div>
Low C
iss
C
iss
= 1500 pF TYP.
鈥?/div>
High Avalanche Capability Ratings
鈥?/div>
Built-in G-S Gate Protection Diodes
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
0.7 卤0.1
2.54
1.3 卤0.2
1.5 卤0.2
2.54
0.65 卤0.1
2.5 卤0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
60
卤20
卤30
卤120
35
2.0
150
30
90
V
V
A
A
W
W
藲C
Gate
Drain
1 2 3
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Total Power Dissipation (T
c
= 25 藲C) P
T1
Total Power Dissipation (T
A
= 25 藲C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
T
ch
T
stg
I
AS
E
AS
鈥?5 to +150 藲C
A
mJ
Body
Diode
Gate Protection
Diode
Source
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
The information in this document is subject to change without notice.
Document No. TC-2497
(O. D. No. TC-8029)
Date Published November 1994 P
Printed in Japan
漏
1994

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