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2SK2413 Datasheet

  • 2SK2413

  • MOS Field Effect Transistor

  • 116.55KB

  • NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2413
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2413 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)1
= 70 m鈩?MAX. (@ V
GS
= 10 V, I
D
= 5.0 A)
R
DS(on)2
= 95 m鈩?MAX. (@ V
GS
= 4 V, I
D
= 5.0 A)
8.0 卤0.2
4.5 卤0.2
鈥?/div>
Low C
iss
C
iss
= 860 pF TYP.
鈥?/div>
Built-in G-S Gate Protection Diodes
鈥?/div>
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
13.0 卤0.2
1
2 3
2.5 卤0.2
1.4 卤0.2
1.4 卤0.2
0.5 卤0.1
0.5 卤0.1
0.5 卤0.1
1. Gate
2. Drain
3. Source
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
T
ch
T
stg
I
AS
E
AS
60
卤20
卤10
卤40
1.8
150
10
10
V
V
A
A
W
藲C
A
mJ
Gate Protection
Diode
Source
Gate
Body
Diode
Drain
MP-10 (ISOLATED TO-220)
Total Power Dissipation (T
A
= 25 藲C) P
T
鈥?5 to +150 藲C
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
The information in this document is subject to change without notice.
Document No. TC-2494
(O. D. No. TC-8032)
Date Published November 1994 P
Printed in Japan
漏
1994

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