= 1 200 pF TYP.
鈥?/div>
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 藲C)
Total Power Dissipation (T
A
= 25 藲C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
900
卤30
卤6.0
卤12
100
3.0
150
6.0
42.3
V
V
A
A
W
W
藲C
A
mJ
20.0卤0.2
6.0
1
19 MIN.
3.0卤0.2
2
3
2.2卤0.2
5.45
MP-88
Drain
鈥?5 to +150 藲C
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
Body
Diode
Gate
Source
Document No. D10279EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
漏
1995
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