鈥?/div>
15.0卤0.3
High Avalanche Capability Ratings
Isolate TO-220 Package
Buit-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 藲C)
Total Power Dissipation (T
A
= 25 藲C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
卤20
卤50
卤200
35
2.0
150
50
250
V
V
A
A
W
W
藲C
1 2 3
2.54
0.7卤0.1
1.3卤0.2
1.5卤0.2
2.54
13.5MIN.
12.0卤0.2
Low C
iss
C
iss
= 3400 pF TYP.
3卤0.1
2.5卤0.1
0.65卤0.1
1. Gate
2. Drain
3. Source
鈥?5 to +150 藲C
A
mJ
MP-45F (ISOLATED TO-220)
Drain
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. D10044EJ1V0DS00 (1st edition)
Date Published July 1995 P
Printed in Japan
漏
1995
next