2SK2908-01L Datasheet

  • 2SK2908-01L

  • N-CHANNEL SILICON POWER MOSFET

  • 336.00KB

  • 4页

  • FUJI

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2SK2908-01L,S
FAP-IIIB Series
> Features
-
-
-
-
-
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
Avalanche Rated
N-channel MOS-FET
600V
1,2鈩?/div>
卤9A
60W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25掳C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AV
P
D
T
ch
T
stg
Rating
600
卤9
卤32
卤35
9
144.4
60
150
-55 ~ +150
L=3.27mH,Vcc=60V
Unit
V
A
A
V
V
mJ*
W
掳C
掳C
- Electrical Characteristics (T
C
=25掳C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
DSS
I
GSS
R
DS(on)
g
C
C
C
t
t
t
t
I
V
t
Q
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=600V
T
ch
=25掳C
V
GS
=0V
T
ch
=125掳C
V
GS
=卤35V
V
DS
=0V
I
D
=4,5A
V
GS
=10V
V
GS
=10V
I
D
=4,5A
I
D
=4,5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V
V
GS
=10V
I
D
=9A
R
GS
=10
鈩?/div>
T
ch
=25掳C
L = 3,27mH
I
F
=2 X I
DR
V
GS
=0V T
ch
=25掳C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/碌s T
ch
=25掳C
Min.
600
3,5
Typ.
4,0
10
0,2
10
1,0
1,0
5
900
150
70
25
70
60
35
1,0
550
7,0
Max.
4,5
500
1,0
100
1,2
1,2
1400
230
110
40
110
90
60
1,50
2,5
9
Unit
V
V
碌A
mA
nA
鈩?/div>
鈩?/div>
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
碌C
- Thermal Characteristics
Item
Thermal Resistance
R
R
th(ch-c)
th(ch-a)
Symbol
channel to case
channel to ambient
Min.
Typ.
Max.
2,08
75,0
Unit
掳C/W
掳C/W

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