0.7 mm alumina board.
鈭?/div>
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
!Electrical
characteristics
(Ta = 25掳C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
铮
fs
铮︹垪
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Min.
鈭?/div>
60
鈭?/div>
0.8
鈭?/div>
鈭?/div>
1.5
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
0.25
0.35
鈭?/div>
160
85
25
20
50
120
70
Max.
卤10
鈭?/div>
10
1.5
0.32
0.45
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Unit
碌A
V
碌A
V
鈩?/div>
鈩?/div>
S
pF
pF
pF
ns
ns
ns
ns
Test Conditions
V
GS
=
卤20V,
V
DS
=
0V
I
D
=
1mA, V
GS
=
0V
V
DS
=
60V, V
GS
=
0V
V
DS
=
10V, I
D
=
1mA
I
D
=
1A, V
GS
=
4V
I
D
=
1A, V
GS
=
2.5V
I
D
=
1A, V
DS
=
10V
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
I
D
=
1A, V
DD
V
GS
=
4V
R
L
=
30鈩?/div>
R
G
=
10鈩?/div>
30V
鈭?/div>
Pw
鈮?/div>
300碌s, Duty cycle
next
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