2SK3265 Datasheet

  • 2SK3265

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  • Toshiba

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2SK3265
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺鈭扢OSV)
2SK3265
Chopper Regulators DC鈭扗C Converter, and Motor Drive
Applications
l
Low drain鈭抯ource ON resistance
l
High forward transfer admittance
l
Low leakage current
l
Enhancement鈭抦ode
: R
DS (ON)
= 0.72
鈩?/div>
(typ.)
: |Y
fs
| = 7.0 S (typ.)
Unit: mm
: I
DSS
=
100
碌A (max) (V
DS
= 700 V)
: V
th
= 2.0~4.0 V (V
DS
=
10
V, I
D
=
1
mA)
Maximum Ratings
(Tc = 25掳C)
Characteristics
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
700
700
卤30
10
30
45
420
10
4.5
150
鈭?5~150
Unit
V
V
V
A
A
W
mJ
A
mJ
掳C
掳C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抍)
R
th (ch鈭抋)
Max
2.78
62.5
Unit
掳C / W
掳C / W
Note 1: Please use devices on condition that the channel temperature is below 150掳C.
Note 2: V
DD =
90 V, T
ch
= 25掳C (initial), L = 7.5 mH, R
G
= 25
鈩?
I
AR
= 10 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-06-05

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