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2SK3326 Datasheet

  • 2SK3326

  • MOS Field Effect Transistor

  • 70.52KB

  • NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3326
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3326
PACKAGE
Isolated TO-220
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
鈥?/div>
Low gate charge :
Q
G
= 22 nC TYP. (V
DD
= 400 V, V
GS
= 10 V, I
D
= 10 A)
鈥?/div>
Gate voltage rating :
卤30
V
鈥?/div>
Low on-state resistance :
R
DS(on)
= 0.85
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
鈥?/div>
Avalanche capability ratings
鈥?/div>
Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25掳C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
500
卤30
卤10
卤40
40
2.0
150
鈥?5 to +150
10
10.7
V
V
A
A
W
W
掳C
掳C
A
mJ
Total Power Dissipation (T
C
= 25掳C)
Total Power Dissipation (T
A
= 25掳C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
Starting T
ch
= 25 掳C, V
DD
= 150 V, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14204EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
漏
2000

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