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2SK3356 Datasheet

  • 2SK3356

  • MOS Field Effect Transistor

  • 38.01KB

  • NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3356
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3356
PACKAGE
TO-3P
DESCRIPTION
The 2SK3356 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
鈥?/div>
Super low on-state resistance:
5
5
R
DS(on)1
= 8.0 m鈩?MAX. (V
GS
= 10 V, I
D
= 38 A)
R
DS(on)2
= 12 m鈩?MAX. (V
GS
= 4 V, I
D
= 38 A)
鈥?/div>
Built-in gate protection diode
5
鈥?/div>
Low C
iss
: C
iss
= 6300 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25掳C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
60
卤20
卤75
卤300
130
3.0
150
鈥?5 to +150
55
302
V
V
A
A
W
W
掳C
掳C
A
mJ
5
Total Power Dissipation (T
C
= 25掳C)
Total Power Dissipation (T
A
= 25掳C)
Channel Temperature
Storage Temperature
5
5
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
5
2.
Starting T
ch
= 25 掳C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
0.93
41.7
掳C/W
掳C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14133EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
1999

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