2SK3372 Datasheet_PDF文件下载_芯片资料查询

Low noise voltage of NV

0.33

+0.05

鈥?.02

3

0.10

+0.05

鈥?.02

(0.40) (0.40)

0.80

卤0.05

1.20

卤0.05

5藲

0.15 min.

0.23

+0.05

鈥?.02

1

2

I

Absolute Maximum Ratings

T

a

=

25掳C

Parameter

Drain-source voltage

Drain-gate voltage

Drain-source current

Drain-gate current

Gate-source current

Allowable power dissipation

Operating ambient temperature

Storage temperature

Symbol

V

DSO

V

DGO

I

DSO

I

DGO

I

GSO

P

D

T

opr

T

stg

Rating

20

2

100

鈭?0

to

+80

鈭?5

to

+125

Unit

V

mA

mW

掳C

0 to 0.01

0.52

卤0.03

5藲

1: Drain

2: Source

3: Gate

SSSMini3-F1 Package

Marking Symbol: 1H

I

Electrical Characteristics

T

a

=

25掳C

卤

3掳C

Parameter

Drain current

Symbol

I

D *1

I

DSS

Mutual conductance

Noise voltage

Voltage gain

g

m

NV

G

V1

G

V2

G

V3

鈭嗭＆G

V

. f铮?/div>

*2

Voltage gain difference

Electrostatic discharge

*3

铮

V2

鈭?/div>

G

V1

铮?/div>

铮

V1

鈭?/div>

G

V3

铮?/div>

ESD

C

=

200 pF, R

=

0

鈩?/div>

Conditions

V

DS

=

2.0 V, R

D

=

2.2 k鈩?/div>

卤

1%

V

DS

=

2.0 V, R

D

=

2.2 k鈩?/div>

卤

1%, V

GS

=

0

V

D

=

2.0 V, V

GS

=

0, f

=

1 kHz

V

D

=

2.0 V, R

D

=

2.2 k鈩?/div>

卤

1%

C

O

=

5 pF, A-Curve

V

D

=

2.0 V, R

D

=

2.2 k鈩?/div>

卤

1%

C

O

=

5 pF, e

G

=

10 mV, f

=

1 kHz

V

D

=

12 V, R

D

=

2.2 k鈩?/div>

卤

1%

C

O

=

5 pF, e

G

=

10 mV, f

=

1 kHz

V

D

=

1.5 V, R

D

=

2.2 k鈩?/div>

卤

1%

C

O

=

5 pF, e

G

=

10 mV, f

=

1 kHz

V

D

=

2.0 V, R

D

=

2.2 k鈩?/div>

卤

1%

C

O

=

5 pF, e

G

=

10 mV, f

=

1 kHz to 70 Hz

0

卤200

鈭?.5

鈭?.0

鈭?.7

鈭?.5

鈭?.0

0

1.7

4.0

1.7

V

dB

Min

100

107

660

1 600

4

Typ

Max

460

470

碌S

mV

dB

Unit

碌A

Note) *1: I

D

is assured for I

DSS

.

*2:

鈭嗭＆G

V

. f铮?is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)

*3: Test method of electrostatic discharge are based on Standard of Electronic Industries Association of Japan EIAJ ED-4701

Environmental and endurance test methods for semiconductor devices. Judgment standard is product specification.

0.15 max.

0.15 min.

0.80

卤0.05

1.20

卤0.05

Publication date: April 2002

SJF00032AED

1

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