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5SDF10H6004 Datasheet

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V
RRM
I
F(AV)M
I
FSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
6000
1100
18脳10
3
1.5
0.6
3800
V
A
A
V
m鈩?/div>
V
Fast Recovery Diode
5SDF 10H6004
Doc. No. 5SYA1109-02 Oct. 06
鈥?/div>
Patented free-floating silicon technology
鈥?/div>
Low on-state and switching losses
鈥?/div>
Optimized for use as freewheeling diode in high-
voltage GTO converters
鈥?/div>
Industry standard housing
鈥?/div>
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Symbol Conditions
V
RRM
V
DC-link
f = 50 Hz, t
p
= 10ms, T
vj
= 125掳C
Ambient cosmic radiation at sea level in open
air. (100% Duty)
min
typ
Value
6000
3800
Unit
V
V
Parameter
Repetitive peak reverse current
Symbol Conditions
I
RRM
V
R
= V
RRM
, T
vj
= 125掳C
max
50
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
m
a
a
Device unclamped
Device clamped
min
36
typ
40
max
44
50
200
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
D
S
D
a
min
26.2
30
20
typ
max
0.83
26.6
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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