CEB65A3 Datasheet

  • CEB65A3

  • Chino-Excel Technology [N-Channel Enhancement Mode Field Ef...

  • 101.64KB

  • CET

扫码查看芯片数据手册

上传产品规格书

PDF预览

CEP65A3/CEB65A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 45A,R
DS(ON)
= 12m鈩?@V
GS
= 10V.
R
DS(ON)
= 18m鈩?@V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
25
Units
V
V
A
A
W
W/ C
C
20
45
180
43
0.29
-55 to 175
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
胃JC
R
胃JA
Limit
3.5
62.5
Units
C/W
C/W
2006.July
1
http://www.cetsemi.com

CEB65A3相关型号PDF文件下载

您可能感兴趣的PDF文件资料

热门IC型号推荐

扫码下载APP,
一键连接广大的电子世界。

在线人工客服

买家服务:
卖家服务:

0571-85317607

客服在线时间周一至周五
9:00-17:30

关注官方微信号,
第一时间获取资讯。

建议反馈
返回顶部

建议反馈

联系人:

联系方式:

按住滑块,拖拽到最右边
>>
感谢您向阿库提出的宝贵意见,您的参与是维库提升服务的动力!意见一经采纳,将有感恩红包奉上哦!