N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 55A, R
DS(ON)
= 11m鈩?@V
GS
= 10V.
R
DS(ON)
= 14m鈩?@V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED63A3/CEU63A3
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
D
G
S
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
30
Units
V
V
A
A
W
W/ C
C
卤
20
55
150
57
0.45
-55 to 150
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
胃JC
R
胃JA
Limit
2.2
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2.
2006.Nov
http://www.cetsemi.com
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