IRFD210 Datasheet

  • IRFD210

  • 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET

  • 52.32KB

  • Intersil

扫码查看芯片数据手册

上传产品规格书

PDF预览

IRFD210
Data Sheet
July 1999
File Number
2316.3
0.6A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a speci铿乪d level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power 铿乪ld
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17442.
Features
鈥?0.6A, 200V
鈥?r
DS(ON)
= 1.500鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRFD210
PACKAGE
HEXDIP
BRAND
IRFD210
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
HEXDIP
DRAIN
GATE
SOURCE
4-281
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999

IRFD210 产品属性

  • IRFD210

  • 2,500

  • 分离式半导体产品

  • FET - 单

  • -

  • MOSFET N 通道,金属氧化物

  • 标准型

  • 200V

  • 600mA

  • 1.5 欧姆 @ 360mA,10V

  • 4V @ 250µA

  • 8.2nC @ 10V

  • 140pF @ 25V

  • 1W

  • 通孔

  • 4-DIP(0.300",7.62mm)

  • 4-DIP,Hexdip,HVMDIP

  • 管件

  • *IRFD210

IRFD210相关型号PDF文件下载

  • 型号
    版本
    描述
    厂商
    下载
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.7A I(D) |...
    ETC
  • 英文版
    HEXFET TRANSISTORS N-CHANNEL HEXDIP
    IRF [Internatio...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.4A I(D) |...
    ETC
  • 英文版
    HEXFET TRANSISTORS N-CHANNEL HEXDIP
    IRF [Internatio...
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)
    IRF
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    HEXFET? Power MOSFETs
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 1.4A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2.4A I(D) |...
    ETC
  • 英文版
    HEXFET TRANSISTORS N-CHANNEL HEXDIP
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2.2A I(D) |...
    ETC
  • 英文版
    HEXFET TRANSISTORS N-CHANNEL HEXDIP
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.2A I(D) |...
    ETC
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A)
    IRF
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | ...
    Vishay Siliconi...
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    HEXFET? Power MOSFETs
  • 英文版
    1A, 100V, 0.600 Ohm, N-Channel Power MOSFET
    Intersil

扫码下载APP,
一键连接广大的电子世界。

在线人工客服

买家服务:
卖家服务:

0571-85317607

客服在线时间周一至周五
9:00-17:30

关注官方微信号,
第一时间获取资讯。

建议反馈

联系人:

联系方式:

按住滑块,拖拽到最右边
>>
感谢您向阿库提出的宝贵意见,您的参与是维库提升服务的动力!意见一经采纳,将有感恩红包奉上哦!