64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
for AT&T
CMOS SRAM
Revision History
Rev. No.
Rev. 0.0
Rev. 1.0
History
Initial release with Preliminary.
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Changed DC characteristics.
Item
I
CC
12ns
15ns
20ns
Added 48-fine pitch BGA.
Changed device part name for FP-BGA.
Item
Previous
Symbol
Z
ex) K6R1016V1C-Z -> K6R1016V1C-F
Changed device ball name for FP-BGA.
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
1. Added 10ns speed for FP-BGA only.
2. Changed Standby Current.
Item
Previous
Standby Current(Isb1)
0.3mA
3. Added Data Retention Characteristics.
Draft Data
Aug. 5. 1998
Sep. 7. 1998
Remark
Preliminary
Final
Previous
85mA
83mA
80mA
Changed
95mA
93mA
90mA
Sep. 17. 1998
Nov. 5. 1998
Changed
F
Final
Final
Rev. 2.0
Rev. 2.1
Rev. 2.2
Dec. 10. 1998
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
Mar. 2. 1999
Changed
0.5mA
Final
Rev. 3.0
Final
Rev. 3.1
Rev. 3.2
Added 10ns speed for all packages(44SOJ / 44TSOP2 / 48FPBGA)
Supply Voltage Change
1. Only 10ns Bin : 3.15V ~ 3.6V
2. The Rest Bin : 3.0V ~ 3.6V
V
IH
/V
IL
Change
Item
V
IH
V
IL
Previous
Min
2.0
-0.5
Max
V
CC
+0.5
0.8
Min
2.0
-0.3
Changed
Max
V
CC
+0.3
0.8
Apr. 24. 2000
Aug. 25. 2000
Final
Final
Rev. 3.3
Oct. 2. 2000
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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