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omponents
21201 Itasca Street Chatsworth
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MBR2520
THRU
MBR25100
25 Amp
Schottky Barrier
Rectifier
20 to 100 Volts
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
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Operating Temperature: -55掳C to +150掳C
Storage Temperature: -55掳C to +150掳C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
TO-220AC
B
F
Q
T
A
U
C
S
MBR2520
MBR2530
MBR2535
MBR2540
MBR2545
MBR2560
MBR2580
MBR25100
MBR2520
MBR2530
MBR2535
MBR2540
MBR2545
MBR2560
MBR2580
MBR25100
14V
21V
24.5V
28V
31.5
42V
56V
70V
H
K
L
D
J
R
Electrical Characteristics @ 25掳C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
MBR2020-2045
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
F(AV)
25A
T
C
= 130掳C
G
I
FSM
150A
8.3ms, half sine
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
MM
15.11
9.65
4.06
0.64
3.61
4.83
2.79
0.46
12.70
1.14
2.54
2.04
1.14
5.97
-----
15.75
10.29
4.82
0.89
3.73
5.33
3.30
0.64
14.27
1.52
3.04
2.79
1.39
6.48
1.27
V
F
MBR2060
MBR2080-20100
.63V
.75V
.84V
I
FM
= 25A per
element;
T
A
= 25掳C*
I
R
0.2mA
T
J
= 25掳C
INCHES
.595
.620
.380
.405
.160
.190
.025
.035
.142
.147
.190
.210
.110
.130
.018
.025
.500
.562
.045
.060
.100
.120
.080
.110
.045
.055
.235
.255
------
.050
*Pulse test: Pulse width 300
碌sec,
Duty cycle 1%
www.mccsemi.com
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