MPSA65 / MMBTA65 / PZTA65
Discrete POWER & Signal
Technologies
MPSA65
MMBTA65
C
PZTA65
C
E
C
B
E
C
B
TO-92
E
SOT-23
Mark: 2W
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25掳C unless otherwise noted
Parameter
Value
30
30
10
1.2
-55 to +150
Units
V
V
V
A
掳C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25掳C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25掳C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA65
625
5.0
83.3
200
Max
*MMBTA65
350
2.8
357
**PZTA65
1,000
8.0
125
Units
mW
mW/掳C
掳C/W
掳C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
漏
1997 Fairchild Semiconductor Corporation
A65, Rev A
1
2
