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MRF6401 Datasheet

  • MRF6401

  • Motorola, Inc [RF LINEAR POWER TRANSISTOR]

  • 114.99KB

  • MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF6401/D
NPN Silicon
RF Power Transistor
The MRF6401 is designed for Class A common emitter, linear power
amplifiers in the 1.0 鈥?2.0 GHz frequency range. It has been specifically
designed for use in Personal Communications Network (PCN) base station and
INMARSAT Standard M applications.
鈥?/div>
Specified 20 Volts, 1.66 GHz Characteristics:
Output Power 鈥?0.5 Watts
Gain 鈥?10 dB Min
Class A Operation
鈥?/div>
Specified 20 Volts, 1.88 GHz Characteristics:
Output Power 鈥?0.5 Watts
Gain 鈥?9.0 dB Min
Class A Operation
鈥?/div>
Circuit Board Photomaster Available by Ordering Document
MRF6401PHT/D from Motorola Literature Distribution.
MRF6401
0.5 W, 1.0 to 2.0 GHz
RF LINEAR
POWER TRANSISTOR
CASE 305C鈥?2, STYLE 1
SOE200鈥揚ILL
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Operating Junction Temperature
Total Device Dissipation @ TC = 25掳C
Derate above 25掳C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
TJ
PD
Tstg
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
胃JC
Symbol
Min
Typ
Value
22
45
3.5
200
5.8
0.033
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
掳C
Watts
W/掳C
掳C
THERMAL CHARACTERISTICS
Max
30
Unit
掳C/W
ELECTRICAL CHARACTERISTICS
(TC = 25掳C unless otherwise noted)
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 10 mAdc, RB = 75
鈩?
Emitter鈥揃ase Breakdown Voltage
(IE = 0.25 mAdc)
Collector鈥揃ase Breakdown Voltage
(IC = 1 mAdc)
V(BR)CER
V(BR)EBO
V(BR)CBO
28
3.5
45
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
(1) Thermal resistance is determined under specified RF operating condition.
REV 1
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
MRF6401
1

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