鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF650
50 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 316鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25掳C
Derate above 25掳C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Value
16.5
38
4.0
12
135
0.77
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/掳C
掳C
掳C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.3
Unit
掳C/W
ELECTRICAL CHARACTERISTICS
(TC = 25掳C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25掳C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
hFE
Cob
16.5
38
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
20
70
120
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
鈥?/div>
135
170
pF
(continued)
REV 8
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF650
1
MRF650 产品属性
TriQuint
射频放大器
1063574
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