鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25掳C
Derate above 25掳C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
16
36
4.0
2.0
25
143
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/掳C
掳C
掳C
MRF652
MRF652S
5.0 W, 512 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 244鈥?4, STYLE 1
MRF652
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
7.0
Unit
掳C/W
CASE 249鈥?6, STYLE 1
MRF652S
ELECTRICAL CHARACTERISTICS
(TC = 25掳C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 25 mAdc, IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
16
36
36
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
10
鈥?/div>
150
鈥?/div>
(continued)
REV 7
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
MRF652 MRF652S
1
MRF652 产品属性
TriQuint
射频放大器
1063575
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