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MWIC930GNR1 Datasheet

  • MWIC930GNR1

  • RF LDMOS Wideband Integrated Power Amplifiers

  • 436.00KB

  • 16页

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MWIC930N
Rev. 6, 5/2006
RF LDMOS Wideband Integrated
Power Amplifiers
The MWIC930N wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Freescale鈥檚 newest High Voltage (26 to
28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband On - Chip integral matching circuitry makes it usable from 790 to
1000 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
鈥?/div>
Typical Performance @ P1dB: V
DD
= 26 Volts, I
DQ1
= 90 mA, I
DQ2
=
240 mA, P
out
= 30 Watts P1dB, Full Frequency Band (921 - 960 MHz)
Power Gain 鈥?30 dB
Power Added Efficiency 鈥?45%
Driver Application
鈥?/div>
Typical Single - Carrier N - CDMA Performance: V
DD
= 27 Volts, I
DQ1
=
90 mA, I
DQ2
= 240 mA, P
out
= 5 Watts Avg., Full Frequency Band
(865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain 鈥?31 dB
Power Added Efficiency 鈥?21%
ACPR @ 750 kHz Offset 鈥?- 52 dBc in 30 kHz Bandwidth
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output
Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
鈥?/div>
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
鈥?/div>
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
鈥?/div>
Integrated ESD Protection
鈥?/div>
200掳C Capable Plastic Package
鈥?/div>
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
RD2
V
RG2
V
DS1
MWIC930NR1
MWIC930GNR1
746 - 960 MHz, 30 W, 26 - 28 V
SINGLE N - CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND INTEGRATED
POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MWIC930NR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MWIC930GNR1
GND
V
RD2
V
RG2
V
DS1
V
RD1
V
DS2
/RF
out
RF
in
V
RG1
V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
in
V
RD1
V
RG1
RF
out/
V
DS2
13
12
NC
GND
V
GS1
V
GS2
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MWIC930NR1 MWIC930GNR1
1
RF Device Data
Freescale Semiconductor

MWIC930GNR1 PDF文件相关型号

MWIC930NR1,S12DBGV1

MWIC930GNR1 产品属性

  • RF Devices Discontinuation 01/Jul/2010

  • 500

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 900MHz

  • -

  • 30dB

  • -

  • 手机，GSM，EDGE，N-CDMA

  • 26V

  • 90mA

  • -

  • TO-272-16 变型，鸥翼

  • 带卷 (TR)

  • MWIC930GNR1TR

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