型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
1S1588 |
Silicon Epitaxial Planar Type |
405.25K |
TOSHIBA [Toshiba Semiconductor] |
|
1S1588 |
1S1588
High switching speed: max. 4 ns
Continuous reverse voltage:max. 30 V
Repetitive peak reverse voltage:max. 35 V
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Symbol Value Unit
V
RRM 35 V
V
RM 30 V
Maximum Continuous Forward Current I
F 120 mA
Maximum Forward Current I
FM 360 mA
Maximum Power Dissipation P
D 300 mW
Maximum Non-repetitive Peak Forward Current I
FSM 0.5 A
Maximum Junction Temperature T
J 175 °C
Storage Temperature Range T
S -65 to + 200 °C
Electrical Characteristics (T
J
= 25°C unless otherwise noted)
Parameter Symbol Min Typ Max Unit
Reverse Current I
R
V
R
= 30 V - - 0.5 μA
Forward Voltage V
F
I
F
= 100 mA - - 1.3 V
Diode Capacitance Cd - - 3.0 pF
I
F
= 10 mA to I
R
= 60 mA
R
L
= 100 Ω ; measured
at I
R
= 1mA
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Test Condition
f = 1MHz ; V
R
= 0
Reverse Recovery Time ns 4 - - Trr
Features
!
!
!
0.079(2.0)
MAX
0.020( |
654.8K |
SUNMATE/森美特 |
|
1S1588 |
Silicon Epitaxial Planar Type |
406.12K |
TOSHIBA |
|