| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| 2SC3356 |
2SC3356 |
102.57K |
NEC |
 |
| 2SC3356 |
NPN Silicon Epitaxial Transistor |
39.23K |
KEXIN [Guangdong Kexin Industrial Co.,Ltd] |
|
| 2SC3356 |
isc Silicon NPN RF Transistor |
235.35K |
ISC [Inchange Semiconductor Company Limited] |
|
| 2SC3356 |
SILICON TRANSISTOR |
1876.29K |
永裕泰 |
|
| 2SC3356 |
2SC3356 |
97.22K |
金誉 |
|
| 2SC3356 |
SMDType Transistors
2SC3356
Features
Lownoiseandhighgain.
NF= 1.1dB Typ.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz
Highpowergain.
MAG= 13dB Typ.@VCE=10V,IC=20mA,f=1.0GHz
AbsoluteMaximumRatingsTa=25
Parameter Symbol Rating Unit
Collectortobasevoltage VCBO 20 V
Collectortoemittervoltage VCEO 12 V
Emittertobasevoltage VEBO 3.0 V
Collectorcurrent(DC) IC 100 mA
Total powerdissipation Ptot 200 mW
Junctiontemperature Tj 150
Storagetemperaturerange Tstg -65to+150
hFEClassification
Marking R23 R24 R25
Rank Q R S
hFE 50 100 80 160 125 250
0.4
+0.1
-0.1
2.9
+0.1
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4 1.Base
2.Emitter
3.collector
12
3
Unit:mm
SOT-23
0.1
+0.05
-0.01
ElectricalCharacteristicsTa=25
Parameter Symbol Testconditons Min Typ Max Unit
Collectorcutoffcurrent ICBO VCB=10V,IE=0mA 1.0 A
Emittercutoffcurrent IEBO VEB=1.0V,IC=0mA 1.0 A
DCcurrentgain * hFE VCE=10V,IC= 20mA 50 120 250
Insertionpowergain S21e
2
VCE=10V,IC=20mA,f=1GHz 11. |
91.13K |
|
|
| 2SC3356 |
DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985 ?
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
? Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
? High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 |
104.16K |
|
|
| 2SC3356 SOT-23 |
|
0.16K |
银河微电子 |
|
| 2SC3356(NE85633) |
Discrete
|
85.25K |
ETC |
|
| 2SC3356_1334 |
DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985 ?
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
? Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
? High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 |
104.16K |
|
|
| 2SC3356_1334 |
SMDType Transistors
2SC3356
Features
Lownoiseandhighgain.
NF= 1.1dB Typ.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz
Highpowergain.
MAG= 13dB Typ.@VCE=10V,IC=20mA,f=1.0GHz
AbsoluteMaximumRatingsTa=25
Parameter Symbol Rating Unit
Collectortobasevoltage VCBO 20 V
Collectortoemittervoltage VCEO 12 V
Emittertobasevoltage VEBO 3.0 V
Collectorcurrent(DC) IC 100 mA
Total powerdissipation Ptot 200 mW
Junctiontemperature Tj 150
Storagetemperaturerange Tstg -65to+150
hFEClassification
Marking R23 R24 R25
Rank Q R S
hFE 50 100 80 160 125 250
0.4
+0.1
-0.1
2.9
+0.1
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4 1.Base
2.Emitter
3.collector
12
3
Unit:mm
SOT-23
0.1
+0.05
-0.01
ElectricalCharacteristicsTa=25
Parameter Symbol Testconditons Min Typ Max Unit
Collectorcutoffcurrent ICBO VCB=10V,IE=0mA 1.0 A
Emittercutoffcurrent IEBO VEB=1.0V,IC=0mA 1.0 A
DCcurrentgain * hFE VCE=10V,IC= 20mA 50 120 250
Insertionpowergain S21e
2
VCE=10V,IC=20mA,f=1GHz 11. |
91.13K |
|
|
| 2SC3356F |
NPN Silicon Plastic Encapsulated Transistor |
349.8K |
SECOS [SeCoS Halbleitertechnologie GmbH] |
|
| 2SC3356Q |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
|
103.98K |
NEC |
|
| 2SC3356R |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
|
103.98K |
NEC |
|
| 2SC3356R23 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
|
103.98K |
NEC |
|
| 2SC3356R24 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
|
103.98K |
NEC |
|
| 2SC3356R25 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
|
103.98K |
NEC |
|
| 2SC3356-R-A |
暂无描述 |
115.33K |
NEC |
|
| 2SC3356S |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 |
102.57K |
NEC [ NEC ] |
|
| 2SC3356S |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
|
103.98K |
NEC |
|
