| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| 5SDD50N5500 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RSM
= 5500 V
I
F(AV)M
= 4700 A
I
F(RMS)
= 7390 A
I
FSM
= 73×10
3
A
V
F0
= 0.8 V
r
F
= 0.107 mW
Rectifier Diode
5SDD 50N5500
Doc. No. 5SYA1169-00 Sep. 04
· Patented free-floating silicon technology
· Very low on-state losses
· Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= 0...150°C 5000 V
Non - repetitive peak reverse voltage V
RSM
f = 5 Hz, t
p
= 10ms, T
j
= 0...150°C 5500 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. (reverse) leakage current I
RRM
V
RRM
, Tj = 150°C 400 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
81 90 108 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Devic |
764.08K |
|
 |
| 5SDD50N5500 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RSM
= 5500 V
I
F(AV)M
= 4700 A
I
F(RMS)
= 7390 A
I
FSM
= 73×10
3
A
V
F0
= 0.8 V
r
F
= 0.107 mW
Rectifier Diode
5SDD 50N5500
Doc. No. 5SYA1169-00 Sep. 04
· Patented free-floating silicon technology
· Very low on-state losses
· Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= 0...150°C 5000 V
Non - repetitive peak reverse voltage V
RSM
f = 5 Hz, t
p
= 10ms, T
j
= 0...150°C 5500 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. (reverse) leakage current I
RRM
V
RRM
, Tj = 150°C 400 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
81 90 108 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Devic |
764.41K |
|
|
| 5SDD50N5500_83 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RSM
= 5500 V
I
F(AV)M
= 4700 A
I
F(RMS)
= 7390 A
I
FSM
= 73×10
3
A
V
F0
= 0.8 V
r
F
= 0.107 mW
Rectifier Diode
5SDD 50N5500
Doc. No. 5SYA1169-00 Sep. 04
· Patented free-floating silicon technology
· Very low on-state losses
· Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= 0...150°C 5000 V
Non - repetitive peak reverse voltage V
RSM
f = 5 Hz, t
p
= 10ms, T
j
= 0...150°C 5500 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. (reverse) leakage current I
RRM
V
RRM
, Tj = 150°C 400 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
81 90 108 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Devic |
764.41K |
|
|
