| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| BC337 |
Si-Epitaxial PlanarTransistors |
274K |
DIOTEC [Diotec Semiconductor] |
 |
| BC337 |
NPN SILICON AF MEDIUM POWER TRANSISTOR |
274K |
MICRO-ELECTRONICS [Micro Electronics] |
|
| BC337 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
274K |
SIEMENS [Siemens Semiconductor Group] |
|
| BC337 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
274K |
SEMTECH [Semtech Corporation] |
|
| BC337 |
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
274K |
KEC [KEC(Korea Electronics)] |
|
| BC337 |
Mini size of Discrete semiconductor elements |
274K |
ETC [ETC] |
|
| BC337 |
NPN general purpose transistor |
274K |
PHILIPS [Philips Semiconductors] |
|
| BC337 |
Amplifier Transistor |
274K |
MOTOROLA [Motorola, Inc] |
|
| BC337 |
Amplifier Transistors(NPN Silicon) |
274K |
ONSEMI [ON Semiconductor] |
|
| BC337 |
Small Signal Transistors (NPN) |
274K |
GE [General Semiconductor] |
|
| BC337 |
SWITCHING AND AMPLIFIER APPLICATIONS |
274K |
FAIRCHILD [Fairchild Semiconductor] |
|
| BC337 |
Amplifier Transistor |
166.94K |
MOTOROLA |
|
| BC337 |
Amplifier Transistors(NPN Silicon) |
123.07K |
ONSEMI |
|
| BC337 |
NPN general purpose transistor |
51.32K |
PHILIPS |
|
| BC337 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
345.6K |
SEMTECH |
|
| BC337 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
153.48K |
INFINEON |
|
| BC337 |
SWITCHING AND AMPLIFIER APPLICATIONS |
27.63K |
FAIRCHILD |
|
| BC337 |
Small Signal Transistors (NPN) |
226.7K |
VISHAY |
|
| BC337 |
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
275.79K |
KEC |
|
| BC337 |
NPN SILICON AF MEDIUM POWER TRANSISTOR |
144.58K |
MICRO-ELECTRONICS |
|
