型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
BC857C |
PNP Silicon AF Transistors |
271.92K |
Infineon |
|
BC857C |
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
46.67K |
DIODES |
|
BC857C |
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
349.72K |
TRSYS |
|
BC857C |
PNP general purpose transistors |
52.1K |
PHILIPS |
|
BC857C |
Surface mount Si-Epitaxial PlanarTransistors |
126.68K |
DIOTEC |
|
BC857C |
PNP Small Signal Transistor 310mW |
108.53K |
MCC |
|
BC857C |
PNP General Purpose Amplifier |
43.09K |
FAIRCHILD |
|
BC857C |
SURFACE MOUNT PNP SILICON TRANSISTOR |
118.39K |
CENTRAL |
|
BC857C/E8 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-23
|
218.96K |
ETC |
|
BC857C/E9 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-23
|
218.96K |
ETC |
|
BC857C-3G |
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS |
35.74K |
ETC [ETC] |
|
BC857C-3G |
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS |
39.01K |
ETC |
|
BC857C-7 |
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
44.95K |
DIODES [Diodes Incorporated] |
|
BC857C-7 |
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
46.67K |
DIODES |
|
BC857C-7-F |
TRANSISTOR, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:300mW; DC Collector Current:-100mA; DC Current Gain hFE:600; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:-650mV; Current Ic Continuous a Max:-100mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:420; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal |
263.6K |
Diodes Inc. |
|
BC857C-7-F |
TRANS PNP 45V 0.1A SOT23-3 |
355K |
|
|
BC857CDW1T1 |
Dual General Purpose Transistors |
164.15K |
ONSEMI [ON Semiconductor] |
|
BC857CDW1T1 |
Dual General Purpose Transistors(PNP Duals) |
164.15K |
LRC [Leshan Radio Company] |
|
BC857CDW1T1 |
Dual General Purpose Transistors |
110.17K |
ONSEMI |
|
BC857CDW1T1 |
Dual General Purpose Transistors(PNP Duals) |
166.06K |
LRC |
|