| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRF130 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFET |
147.29K |
INTERSIL [Intersil Corporation] |
 |
| IRF130 |
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) |
147.29K |
IRF [International Rectifier] |
|
| IRF130 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
147.29K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF130 |
N-CHANNEL POWER MOSFET |
147.29K |
SEME-LAB [Seme LAB] |
|
| IRF130 |
N-CHANNEL POWER MOSFETS |
147.29K |
SAMSUNG [Samsung semiconductor] |
|
| IRF130 |
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) |
150.15K |
IRF |
|
| IRF130 |
N-CHANNEL POWER MOSFET |
25.29K |
SEME-LAB |
|
| IRF130 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
184.94K |
FAIRCHILD |
|
| IRF130 |
N-CHANNEL POWER MOSFETS |
216.12K |
SAMSUNG |
|
| IRF130 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFET |
60.25K |
INTERSIL |
|
| IRF130-133 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
180.59K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF130-133 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
184.94K |
FAIRCHILD |
|
| IRF1302 |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) |
523.54K |
IRF [International Rectifier] |
|
| IRF1302 |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) |
524.44K |
IRF |
|
| IRF1302L |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
229.09K |
IRF [International Rectifier] |
|
| IRF1302L |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
229.15K |
IRF |
|
| IRF1302LTRL |
Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN |
524.44K |
IRF |
|
| IRF1302LTRLPBF |
Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN |
524.44K |
IRF |
|
| IRF1302PBF |
AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0mヘ , ID = 180A ) |
165.38K |
IRF [International Rectifier] |
|
| IRF1302S |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
229.09K |
IRF [International Rectifier] |
|
