| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRF131 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
180.59K |
FAIRCHILD [Fairchild Semiconductor] |
 |
| IRF131 |
N-CHANNEL POWER MOSFETS |
180.59K |
SAMSUNG [Samsung semiconductor] |
|
| IRF131 |
N-CHANNEL POWER MOSFETS |
216.12K |
SAMSUNG |
|
| IRF131 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
184.94K |
FAIRCHILD |
|
| IRF1310N |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
96.76K |
IRF [International Rectifier] |
|
| IRF1310N |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
98.6K |
IRF |
|
| IRF1310NL |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
156.85K |
IRF [International Rectifier] |
|
| IRF1310NL |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
158.61K |
IRF |
|
| IRF1310NLPBF |
HEXFET Power MOSFET |
725.8K |
IRF [International Rectifier] |
|
| IRF1310NPBF |
HEXFET POWER MOSFET |
600.28K |
IRF [International Rectifier] |
|
| IRF1310NPBF |
MOSFET N-CH 100V 42A TO-220AB |
5K |
|
|
| IRF1310NS |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
156.85K |
IRF [International Rectifier] |
|
| IRF1310NS |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
158.61K |
IRF |
|
| IRF1310NSPBF |
HEXFET Power MOSFET |
725.8K |
IRF [International Rectifier] |
|
| IRF1310NSTRL |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB
|
191.28K |
ETC |
|
| IRF1310NSTRLPBF |
MOSFET N-CH 100V 42A D2PAK |
4K |
|
|
| IRF1310NSTRR |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB
|
191.28K |
ETC |
|
| IRF1310S |
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A) |
361.9K |
IRF [International Rectifier] |
|
| IRF1310S |
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A) |
324.18K |
IRF |
|
| IRF1310STRL |
Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
98.6K |
IRF |
|
