| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRF150 |
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) |
150.48K |
IRF [International Rectifier] |
 |
| IRF150 |
N-Channel Power MOSFETs, 40 A, 60 V/100 V |
150.48K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF150 |
N-CHANNEL POWER MOSFETS |
150.48K |
SAMSUNG [Samsung semiconductor] |
|
| IRF150 |
N-CHANNEL POWER MOSFET |
150.48K |
SEME-LAB [Seme LAB] |
|
| IRF150 |
HIGH VOLTAGE POWER MOSFET DIE |
150.48K |
IXYS [IXYS Corporation] |
|
| IRF150 |
40A, 100V, 0.055 Ohm, N-Channel Power MOSFET |
150.48K |
INTERSIL [Intersil Corporation] |
|
| IRF150 |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
150.48K |
ETC [ETC] |
|
| IRF150 |
HIGH VOLTAGE POWER MOSFET DIE |
49.45K |
IXYS |
|
| IRF150 |
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) |
153.08K |
IRF |
|
| IRF150 |
N-CHANNEL POWER MOSFETS |
215.19K |
SAMSUNG |
|
| IRF150 |
40A, 100V, 0.055 Ohm, N-Channel Power MOSFET |
61.67K |
INTERSIL |
|
| IRF150 |
N-CHANNEL POWER MOSFET |
25.28K |
SEME-LAB |
|
| IRF150 |
N-Channel Power MOSFETs, 40 A, 60 V/100 V |
129.8K |
FAIRCHILD |
|
| IRF150 |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
85.55K |
ETC |
|
| IRF150-153 |
N-Channel Power MOSFETs, 40 A, 60 V/100 V |
125.38K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF150-153 |
N-Channel Power MOSFETs, 40 A, 60 V/100 V |
129.8K |
FAIRCHILD |
|
| IRF1503 |
AUTOMOTIVE MOSFET |
552.76K |
IRF [International Rectifier] |
|
| IRF1503 |
AUTOMOTIVE MOSFET |
552.43K |
IRF |
|
| IRF1503L |
HEXFET Power MOSFET |
659.63K |
IRF [International Rectifier] |
|
| IRF1503L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 190A I(D) | TO-262AA
|
659.9K |
ETC |
|
