| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRF3205 |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
92.66K |
IRF [International Rectifier] |
 |
| IRF3205 |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
92.66K |
IRF [International Rectifier] |
|
| IRF3205 |
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
Continuous Drain Current, VGS @ 10V,TC = 25 ID 110
Continuous Drain Current, VGS @ 10V,TC = 100 ID 80
Pulsed Drain Current*1 IDM 390
Power Dissipation PD 200 W
Linear Derating Factor 1.3 W/ Linear Derating Factor VGS 20 V
Avalanche Current *1 IAR 62 A
Repetitive Avalanche Energy *1 EAR 20 mJ
Peak Diode Recovery dv/dt *2 dv/dt 5 V/ns
Junction-to-Case RθJC 0.75 (Max)
Case-to-Sink, Flat, Greased Surface RθCS 0.5
Junction-to-Ambient RθJA 62 (Max)
Operating Junction and Storage Temperature Range TJ.TSTG -55 to + 175 *1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD 62A, di/dt 207A/μs, VDD V(BR)DSS,TJ 175 A
/W
1
TO-220
2 3
(0.70)
MAX1.47
(30°)
#1
3.30 ±0.10 15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.7 |
328.12K |
|
|
| IRF3205 |
IRF3205
HEXFET
?
Power MOSFET
01/25/01
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
www.irf.com 1
V
DSS
= 55V
R
DS(on)
= 8.0m? I
D
= 110A
S
D
G
TO-220AB
Advanced HEXFET
?
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Advanced Process Technology
|
94.84K |
|
|
| IRF3205 |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
95.08K |
IRF |
|
| IRF3205_1222 |
IRF3205
HEXFET
?
Power MOSFET
01/25/01
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
www.irf.com 1
V
DSS
= 55V
R
DS(on)
= 8.0m? I
D
= 110A
S
D
G
TO-220AB
Advanced HEXFET
?
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Advanced Process Technology
|
94.84K |
|
|
| IRF3205_1222 |
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
Continuous Drain Current, VGS @ 10V,TC = 25 ID 110
Continuous Drain Current, VGS @ 10V,TC = 100 ID 80
Pulsed Drain Current*1 IDM 390
Power Dissipation PD 200 W
Linear Derating Factor 1.3 W/ Linear Derating Factor VGS 20 V
Avalanche Current *1 IAR 62 A
Repetitive Avalanche Energy *1 EAR 20 mJ
Peak Diode Recovery dv/dt *2 dv/dt 5 V/ns
Junction-to-Case RθJC 0.75 (Max)
Case-to-Sink, Flat, Greased Surface RθCS 0.5
Junction-to-Ambient RθJA 62 (Max)
Operating Junction and Storage Temperature Range TJ.TSTG -55 to + 175 *1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD 62A, di/dt 207A/μs, VDD V(BR)DSS,TJ 175 A
/W
1
TO-220
2 3
(0.70)
MAX1.47
(30°)
#1
3.30 ±0.10 15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.7 |
328.12K |
|
|
| IRF3205L |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
160.74K |
IRF [International Rectifier] |
|
| IRF3205L |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
162.05K |
IRF |
|
| IRF3205LPBF |
MOSFET N-CH 55V 110A TO-262 |
4K |
|
|
| IRF3205PBF |
HEXFET Power MOSFET |
176.67K |
IRF [International Rectifier] |
|
| IRF3205PBF |
MOSFET N-CH 55V 110A TO-220AB |
6K |
|
|
| IRF3205PBF |
HEXFET Power MOSFET |
177.34K |
IRF |
|
| IRF3205S |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
160.74K |
IRF [International Rectifier] |
|
| IRF3205S |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
162.05K |
IRF |
|
| IRF3205S_02 |
HEXFET Power MOSFET |
609.74K |
IRF [International Rectifier] |
|
| IRF3205SPBF |
HEXFET㈢ Power MOSFET |
277.35K |
IRF [International Rectifier] |
|
| IRF3205SPBF |
MOSFET N-CH 55V 110A D2PAK |
4K |
|
|
| IRF3205STRL |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 110A I(D) | TO-263AB
|
195.06K |
ETC |
|
| IRF3205STRLPBF |
MOSFET N-CH 55V 110A D2PAK |
4K |
|
|
