| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
170.18K |
MOTOROLA [Motorola, Inc] |
 |
| IRF840 |
N-CHANNEL POWER MOSFETS |
170.18K |
SAMSUNG [Samsung semiconductor] |
|
| IRF840 |
N-Channel Power MOSFETs, 8A, 450 V/500V |
170.18K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF840 |
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
170.18K |
IRF [International Rectifier] |
|
| IRF840 |
PowerMOS transistor Avalanche energy rated |
170.18K |
PHILIPS [Philips Semiconductors] |
|
| IRF840 |
N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET |
170.18K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF840 |
500V N-Channel MOSFET |
170.18K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF840 |
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
170.18K |
INTERSIL [Intersil Corporation] |
|
| IRF840 |
TRANSISTORS N-CHANNEL |
170.18K |
IRF [International Rectifier] |
|
| IRF840 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
342.12K |
STMICROELECTRONICS [STMicroelectronics] |
|
| IRF840 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
96.38K |
A-POWER [Advanced Power Electronics Corp.] |
|
| IRF840 |
isc N-Channel Mosfet Transistor |
118.67K |
ISC [Inchange Semiconductor Company Limited] |
|
| IRF840 |
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
60.6K |
INTERSIL |
|
| IRF840 |
N-CHANNEL POWER MOSFETS |
276.32K |
SAMSUNG |
|
| IRF840 |
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
173.73K |
IRF |
|
| IRF840 |
N-Channel Power MOSFETs, 8A, 450 V/500V |
154.76K |
FAIRCHILD |
|
| IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
151.29K |
MOTOROLA |
|
| IRF840 |
N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET |
95.51K |
STMICROELECTRONICS |
|
| IRF840 |
PowerMOS transistor Avalanche energy rated |
62.33K |
PHILIPS |
|
| IRF840, SIHF840 |
Power MOSFET |
112.87K |
Vishay Intertechnology |
|
