| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRFP460 |
N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH TM MOSFET |
91.86K |
STMicro |
 |
| IRFP460 |
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET |
55.75K |
Intersil |
|
| IRFP460 |
HEXFET? Power MOSFETs |
416.11K |
|
|
| IRFP460 |
HEXFET? Power MOSFET |
163.68K |
|
|
| IRFP460 |
Philips Semiconductors Product specification
PowerMOS transistors IRFP460
Avalanche energy rated
FEATURES SYMBOL QUICK REFERENCE DATA
? Repetitive Avalanche Rated
? Fast switching V
DSS
= 500 V
? Stable off-state characteristics
? High thermal cycling performance I
D
= 20 A
? Low thermal resistance
R
DS(ON)
≤ 0.27 Ω
GENERAL DESCRIPTION PINNING SOT429 (TO247)
N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intended for use in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c. to d.c. converters, motorcontrol
circuits and general purpose 3 source
switching applications.
tab drain
The IRFP460 is supplied in the
SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ?C to 150?C - 500 V
V
DGR
Drain-gate voltage T
j
= 25 ?C to 150?C; R
GS
= 20 kΩ - 500 |
96.52K |
|
|
| IRFP460 |
MegaMOS - Power MOSFET |
80.2K |
IXYS |
|
| IRFP460 |
PowerMOS transistors Avalanche energy rated |
96.75K |
PHILIPS |
|
| IRFP460 |
N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET |
93.93K |
STMICROELECTRONICS |
|
| IRFP460 |
Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A) |
167.23K |
IRF |
|
| IRFP460, SIHFP460 |
Power MOSFET |
113.29K |
Vishay Intertechnology |
|
| IRFP460_611 |
Philips Semiconductors Product specification
PowerMOS transistors IRFP460
Avalanche energy rated
FEATURES SYMBOL QUICK REFERENCE DATA
? Repetitive Avalanche Rated
? Fast switching V
DSS
= 500 V
? Stable off-state characteristics
? High thermal cycling performance I
D
= 20 A
? Low thermal resistance
R
DS(ON)
≤ 0.27 Ω
GENERAL DESCRIPTION PINNING SOT429 (TO247)
N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intended for use in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c. to d.c. converters, motorcontrol
circuits and general purpose 3 source
switching applications.
tab drain
The IRFP460 is supplied in the
SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ?C to 150?C - 500 V
V
DGR
Drain-gate voltage T
j
= 25 ?C to 150?C; R
GS
= 20 kΩ - 500 |
96.52K |
|
|
| IRFP460A |
HEXFET? Power MOSFET |
95.34K |
|
|
| IRFP460A |
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) |
97.14K |
IRF |
|
| IRFP460A, SIHFP460A |
Power MOSFET |
137.66K |
Vishay Intertechnology |
|
| IRFP460APBF |
SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27ヘ , ID=20A ) |
195.25K |
IRF [International Rectifier] |
|
| IRFP460APBF |
MOSFET N-CH 500V 20A TO-247AC |
188K |
|
|
| IRFP460AS |
HEXFET? Power MOSFET |
115.75K |
|
|
| IRFP460AS |
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) |
118.1K |
IRF |
|
| IRFP460BPBF |
MOSFET N-CH 500V 20A TO-247AC |
186K |
|
|
| IRFP460C |
500V N-Channel MOSFET |
721.35K |
FAIRCHILD [ Fairchild Semiconductor ] |
|
